Recently, Inner Mongolia Jinghuan Electronic Materials Co., Ltd., located in Saihan District of Hohhot City, successfully developed a 300kg super-large-size high-quality sapphire crystal. This achievement is a major breakthrough in the field of sapphire crystal growth in China.
It is understood that sapphire crystal is an ideal substrate material for LED, large-scale integrated circuit SOI and SOS and superconducting nanostructure film due to its excellent mechanical properties and good thermal properties. It belongs to the national key support and encourages development of energy. Materials and optoelectronic materials.
The staff is working on sapphire crystal processing
Quality inspection engineer is testing the quality of sapphire crystals
"In the case of equal yield, the larger the size of the sapphire crystal, the higher the utilization of the material, the smaller the corner loss, especially in the application of the substrate above 6 inches, the large-sized panel is more obvious." Ding Jianliang, the company's head of the company, said that the company's financial department's preliminary calculations, compared to 150 kg of sapphire crystals, the 300 kg of sapphire crystals developed this time is expected to reduce the unit cost after production by about 20%.
The person in charge said that the growth threshold of the sapphire crystal growth technology is relatively high, especially the large-scale crystal production equipment and mass production process is difficult. At present, the domestic mainstream sapphire crystal size is still 60 kg-130 kg, the company has realized The mass production of 150 kg crystals, and the successful development of 300 kg sapphire growth equipment and growth technology, shows that the company's large-scale sapphire crystal research and development capabilities, mass production conversion capacity and market competitiveness have reached world-class level.
